Sensors and Electron Devices Directorate Research Areas

Optical Studies of III-V Semiconductor Materials and Device Structures

Advisor: Shen, Paul (paul.shen@us.army.mil 301-394-1531)
Keywords: Optical waveguides; Compound semiconductors; Optical properties; Photometry; Raman spectra;

Heterostructures and heterojunctions; Semiconductor switches; Novel semiconductors
Optical techniques (both CW and time resolved) such as photoluminescence, Raman spectroscopy, and modulation spectroscopy, are being used to study the physics and materials properties of semiconductor heterostructures and devices. Research focuses on (1) the effect of strain on valence band and other strain-induced properties; (2) band mixing effects; (3) the dynamics of carrier transport, carrier relaxation, exciton dephasing, and relaxation in strained systems; (4) applications of strained systems in novel optoelectronic devices; and (5) electric/piezoelectric field effects and their optical detection. Emphasis is also placed on other structures that may lead to device applications, including light modulators, optical waveguides, lasers, high-power optical switches, and infrared detectors. Resources in our laboratory include CW, nanosecond, and femtosecond lasers; high-resolution spectrometers; and CW and time-correlated detecting systems. Research opportunities include basic physics studies and device design, testing, and modeling.