Sensors and Electron Devices Directorate Research Areas

Fabrication and Testing of Wide-Bandgap Semiconductor Devices

Advisor: Jones, Kenneth A. (ken.a.jones@us.army.mil 301.394.2005)
Adelphi, MD

Key words: Device fabrication and testing, Wide bandgap semiconductors, device processing techniques; material device correlation 

Wide-bandgap semiconducting materials such as SiC and GaN possess many intrinsic properties, which make them highly attractive for high-power, high-temperature and high-power, high frequency device applications. These properties include high breakdown strength, high-electron-saturation velocity, high thermal conductivity, thermal stability, and (in the case of GaN/A1GaN) a wide direct bandgap. Recent advances in materials growth processes have spurred the development of new devices and related processing technologies, which are immature. In order to realize the full potential of these materials, we must develop suitable device designs, processes for implanting, etching, contacting, and passivating these devices, and be able to make meaningful material/device correlations. SEDD facilities consist of microwave, ECR, and RF plasma-assisted etching/deposition; metallization; and photo/e-beam lithography. Materials characterization capabilities include secondary ion mass spectrometry, Auger electron spectroscopy, x-ray diffraction, and backscattering spectroscopy. Device testing Other capabilities include dc and rf electrical parameter analysis, pulsed power testing, and optical characterization.