ARL Postdoc Fellowship
ARL Postdoc Fellowship

Sensors and Electron Devices Directorate Research Areas

Nanotechnology

Nanoelectronic Devices and Sensors

Advisor: AE Wickenden

Key words: nanoscience, nanotechnology, nanoelectronics, nanowire, carbon nanotube, nanosensors, Networked microsystems, bio-inspired, Neural architecture


Fundamental research and development is being conducted in the area of nanoscale amperometric sensors with integrated signal processing and communications I/O. Our goal is to integrate into autonomous networked microscale systems as part of the ARL’s growing nano/bio-electronics strategic research thrust. These nanoscale devices utilize carbon nanotubes, organic or inorganic nanowires, and/or organic molecules as active device components. Research is solicited in the development, fabrication, characterization, and modeling of novel nanoscale amperometric sensor devices and high frequency (GHz - THz) communications devices. Key research areas include mechanistic investigations to enhance the selectivity and practical sensitivity of the sensor devices and the signal processing and networking capability of the ultrahigh frequency nanoelectronic communications devices. For example, fundamental transport phenomena such as noise at quantum length scales, phonon transport across disparate interfaces, and ensemble effects in nanoelectronic devices require investigation. ARL has extensive processing/fabrication facilities including direct-write electron beam lithography, a focused ion beam (FIB) etching/deposition tool, a thermal CVD carbon nanotube furnace, an SEM-mounted nanomanipulator/nanoprobe instrument, and extensive state-of-the-art Class 10/100 cleanroom facilities. ARL’s extensive microanalytical and electrical characterization facilities include scanning electron microscopy, transmission electron microscopy, secondary ion mass spectrometry, atomic force microscopy, and a cryogenic probestation with probe capability from 4.5-450 K in temperature, dc-40 GHz in frequency, with fiber optic and gas capillary feedthroughs for specialized nanoelectronic device analysis. Candidates should have a background in physics, electrical engineering, physical chemistry, or materials science. Experience in nanofabrication, electronic transport characterization, and quantum-effect modeling is considered extremely beneficial..

Nanoelectronics Architectures

Advisors: SJ Kilpatrick 

Key Words: nanoelectronics, three-dimensional architectures, carbon nanotubes, nanowires, hybrid synthesis
heterogeneous integration, nanosensors


Fundamental research and development in the area of nanoscale amperometric sensors with fully integrated signal processing and communications I/O, and their integration into microscale systems, is part of the ARL’s growing nano/bio-electronics strategic research thrust. These nanoscale devices will utilize carbon nanotubes, organic or inorganic nanowires, and/or organic molecules as the active components.

Research is solicited in the development, fabrication, characterization, modeling, and understanding of complex three-dimensional nanoscale architectures for such nanoelectronic circuits and systems. These architectures are envisioned to be hybrid and heterogeneously integrated, with tailored properties, and could further incorporate magnetic and/or thermal management structures. These architectures can also become tools for investigating fundamental transport phenomena such as noise at quantum length scales, phonon transport across disparate interfaces, and ensemble effects in nanoelectronic devices.

ARL has superb processing/fabrication facilities including direct-write electron beam lithography, a focused ion beam (FIB) etching/deposition tool, a thermal CVD carbon nanotube furnace, a Zyvex nanomanipulator, and an extensive state-of-the-art Class 10/100 cleanroom. There are also several microanalytical and electrical characterization tools including scanning electron microscopy, transmission electron microscopy, atomic force microscopy, a Desert Cryogenics probestation capable of temperatures from 4.5 to 450 K and electrical measurements for dc to 40 GHz, and also equipped with a fiber optic feed through and a gas capillary.

Candidates should have a background in physics, electrical engineering, or materials science. Experience in nanofabrication, electronic transport characterization, and quantum-effect modeling is considered extremely beneficial.

 

Nanoelectronic Materials and Devices

Advisor:        MH Ervin

Key Words: carbon nanotubes, nanowires, scanning electron microscopy, nanomanipulation, electrical characterization, sensors, high-speed devices


A variety of inorganic nanowires, organic nanofibers, and carbon nanotubes (CNTs) are being investigated for potential application as active elements in sensors, high-speed devices, and thermoelectric devices. Structural, chemical, and electronic characterization of these materials is being performed using various techniques. A Hitachi field emission SEM equipped with a Zyvex S100 nanomanipulation system and Keithley 4200 semiconductor characterization system allows both manipulation and electrical characterization of individual nanoelements. The nanomanipulation system consists of four piezoelectricly driven probe tips (~60nm tip radius) that can be positioned with 5nm precision. This system is used to investigate what new or improved electronic properties may be available at the nanoscale. Other facilities include a CNT growth furnace, a cryogenic probe station, a focused ion beam tool, an electron beam lithography system, a fully equipped cleanroom, and significant materials characterization assets throughout the organization.

Research opportunities in nanoelectronics consist of investigations in the following areas: electrical contacts to nanowires/CNTs, electrical transport phenomena in nanophase materials, characterization methodologies, nanomaterial growth, device assembly, and device integration. One area of particular interest is how to improve the selectivity of nanowire/CNT based sensors to gas-phase chem/bio agents. Internal research is in progress in these areas, in direct collaboration with universities and industry.

 

Optical Interactions in Semiconductors and Nanostructures

Advisor: PM Amirtharaj

Key Words: photonics, optoelectronics, novel semiconductors, nanotechnology, nanostructures


The interaction of light with semiconductors may be used as a powerful probe of their physical behavior and exploited to produce useful devices. SEDD has a wide range of semiconductor growth, analyses, and device fabrication facilities that are being used to produce novel optical devices for the US Army, including quantum-dot based infrared detectors, quantum-well based detectors and lasers, and related optoelectronic and photonic devices. The emerging field of nanotechnology is also being developed for sensor applications. This research project focuses on understanding the microscopic processes that lead to desirable optical properties that may be exploited to aid the soldier.

 

Device Reliability and Failure Physics

Advisor:  KA Jones

Key Words: reliability, physics of failure, wide bandgap semiconductor devices, materials defects, process induced defects, material/device correlations


Wide bandgap semiconductors have tremendous potential for high power and blue emitting devices. They have not yet reached this potential because the as-grown material is not of high quality compared to silicon and GaAs, and the processing procedures are not yet fully developed so they still create an excessive number of defects. We study how the defects are formed both during the growth and processing and learn about their fundamental physics. We use this knowledge to better learn how they can affect the properties and reliability of the devices, as well as to learn how to reduce the number of them created in the first place.

SEDD has extensive materials growth/analysis and device fabrication/testing facilities. The former includes two molecular beam epitaxy units and an ultrahigh vacuum metal deposition system, secondary ion mass spectrometry transmission electron microscopy, scanning Auger microprobe/scanning electron microscopy, and Rutherford backscattering. The latter includes an E-beam lithography system, an RIE and MIE, and extensive photoluminescence and photoreflectance capabilities.

 

Development of novel devices for energy harvesting of visible and infrared radiation

Advisor: BM Nichols

Key Words: Energy harvesting; Nanoelectronics; Nanodevices; Rectenna; Nanostructures; Electron beam lithography; Uncooled infrared

This program encompasses the research and development into materials and/or devices for energy harvesting applications. The development of novel devices for energy harvesting of visible and infrared radiation is of particular interest and warrants the use of nanoscale materials and/or nanotechnology fabrication techniques. The program aims to model, fabricate, and test various nanoelectronic devices, including but not limited to nano-rectennas.

Research will focus on the following areas: (1) design, fabrication, and electrical testing of nanostructure-based (e.g., nanotubes, nanowires,
nanorods) devices and (2) device design, modeling, and fabrication of nano-rectenna energy harvesting devices. Materials characterization and synthesis techniques, such as scanning probe microscopy, Raman spectroscopy, chemical vapor deposition, and electrochemical deposition/etching may also be used in this research. Experience in
micro- and/or nanofabrication, electronic transport characterization, and RF device testing are considered extremely beneficial. ARL resources include a class 10/100 cleanroom with e-beam lithography, dry etching and physical vapor deposition tools, cryogenic nanomanipulation/probing capabilities, semiconductor characterization, and high frequency testing equipment.